Semiconductor on insulator (SOI) device including a discharge path for a decoupling capacitor

ABSTRACT

A silicon on insulator (SOI) device is provided. The device includes an MOS capacitor coupled between voltage busses and formed in a monocrystalline semiconductor layer overlying an insulator layer and a semiconductor substrate. The device includes at least one electrical discharge path for discharging potentially harmful charge build up on the MOS capacitor. The MOS capacitor has a conductive electrode material forming a first plate of the MOS capacitor and an impurity doped region in the monocrystalline silicon layer beneath the conductive electrode material forming a second plate. A first voltage bus is coupled to the first plate of the capacitor and to an electrical discharge path through a diode formed in the semiconductor substrate and a second voltage bus is coupled to the second plate of the capacitor.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.11/459,316, filed Jul. 21, 2006, now issued as U.S. Pat. No. 7,718,503.

TECHNICAL FIELD

The present invention generally relates to a semiconductor on insulator(SOI) devices and to methods for fabricating such devices, and moreparticularly to SOI devices and to methods for fabricating SOI devicesincluding a discharge path for a decoupling capacitor.

BACKGROUND

The majority of present day integrated circuits (ICs) are implemented byusing a plurality of interconnected field effect transistors (FETs),also called metal oxide semiconductor field effect transistors (MOSFETsor MOS transistors). The ICs are usually formed using both P-channelFETs (PMOS transistors or PFETs) and N-channel FETs (NMOS transistors orNFETs) and the IC is then referred to as a complementary MOS or CMOScircuit. Certain improvements in performance of MOS ICs can be realizedby forming the MOS transistors in a thin layer of semiconductor materialoverlying an insulator layer. Such semiconductor on insulator (SOI) MOStransistors, for example, exhibit lower junction capacitance and hencecan operate at higher speeds.

The MOS transistors formed in and on the SOI layer are interconnected toimplement the desired circuit function. A number of voltage busses arealso connected to appropriate devices to power those devices as requiredby the circuit function. The voltage busses may include, for example, aV_(dd) bus, a V_(cc) bus, a V_(ss) bus, and the like, and may includebusses coupled to external power sources as well as busses coupled tointernally generated or internally altered power sources. As usedherein, the terms “V_(dd) bus” and “V_(cc) bus” as well as “voltage bus”and the like will apply to external as well as internal busses. Asvarious nodes in the circuit are either charged or discharged during theoperation of the circuit, the various busses must source or sink currentto those nodes. Especially as the switching speed of the integratedcircuits increases, the requirement of sourcing or sinking current by abus can cause significant voltage spikes on the bus because of theinherent inductance of the bus. It has become commonplace to placedecoupling capacitors between the busses to avoid logic errors thatmight be caused by the voltage spikes. For example, such decouplingcapacitors can be connected between the V_(dd) and V_(ss) busses. Thesedecoupling capacitors are typically distributed along the length of thebusses. The capacitors are usually but not necessarily formed as MOScapacitors with one plate of the capacitor formed by the same materialused to form the gate electrode of the MOS transistors, the other plateof the capacitor formed by an impurity doped region in the SOI layer,and the dielectric separating the two plates of the capacitor formed bythe gate dielectric.

One problem that can affect the yield and reliability of the integratedcircuit can occur when using such MOS capacitors as the decouplingcapacitors between voltage busses. The problem occurs because sufficientcharge can build up on a capacitor during fabrication of the IC to causea destructive discharge through the capacitor dielectric material. Thisproblem becomes more severe as device sizes shrink and especially as thethickness of the gate dielectric layer is reduced. The charge build upresults from one or more of the plasma deposition and/or etching stepsthat are used to deposit and/or etch the interlayer dielectric materialsand the metals or other conductors used in the final steps infabricating the integrated circuits.

Accordingly, it is desirable to provide an MOS device and methods forfabricating such MOS devices that avoids the destructive effects ofcharge build up on decoupling capacitors. In addition, it is desirableto provide methods for fabricating an SOI device that incorporatesdecoupling capacitors and a discharge path for protecting the decouplingcapacitors. Furthermore, other desirable features and characteristics ofthe present invention will become apparent from the subsequent detaileddescription and the appended claims, taken in conjunction with theaccompanying drawings and the foregoing technical field and background.

BRIEF SUMMARY

A silicon on insulator (SOI) device that includes an MOS capacitorcoupled between voltage busses and formed in a monocrystallinesemiconductor layer overlying an insulator layer and a semiconductorsubstrate is provided. The device includes at least one electricaldischarge path for discharging potentially harmful charge build up onthe MOS capacitor. The MOS capacitor has a conductive electrode materialforming a first plate of the MOS capacitor and an impurity doped regionin the monocrystalline silicon layer beneath the conductive electrodematerial forming a second plate. A first voltage bus is coupled to thefirst plate of the capacitor and to an electrical discharge path througha diode formed in the semiconductor substrate. A second voltage bus iscoupled to the second plate of the capacitor.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will hereinafter be described in conjunction withthe following drawing figures, wherein like numerals denote likeelements, and wherein

FIG. 1 illustrates, in partial cross section, a portion of a prior artdecoupling capacitor; and

FIG. 2-11 illustrate, in cross section, method steps for fabricating anSOI integrated circuit in accordance with various embodiments of theinvention.

DETAILED DESCRIPTION

The following detailed description is merely exemplary in nature and isnot intended to limit the invention or the application and uses of theinvention. Furthermore, there is no intention to be bound by anyexpressed or implied theory presented in the preceding technical field,background, brief summary or the following detailed description.

FIG. 1 illustrates, in partial cross section, elements of a conventionaldecoupling capacitor structure 20 implemented in a portion of a siliconon insulator (SOI) integrated circuit (IC) device structure. Such an ICstructure might include a plurality of distributed MOS capacitors 22(only one of which is illustrated), each of which includes a top plate24, a bottom plate 26 and a capacitor dielectric 28. Top plate 24generally is formed from the same material as are the gate electrodes ofthe MOS transistor that make up the remainder of the IC. Capacitordielectric 28 generally is formed of the same material used for the gatedielectric of the MOS transistors of the IC. Bottom plate 26 is formedof a thin layer 30 of silicon that overlies insulator 32 that, in turnoverlies semiconductor substrate 34. In this exemplary illustrationlayer 30 of silicon is doped N-type. Heavily doped N+ contacts 36,formed in self alignment with top plates 24, facilitate ohmic contact tolayer 30. An interlayer dielectric 38 overlies the capacitor structuresand electrically isolates the capacitors from other layers ofmetallization that may be used to interconnect devices of the IC. A bussuch as a V_(dd) bus 40 is coupled to top plates 24 by metallizedcontacts 42 formed in openings 44 through interlayer dielectric 38. Abus such as a V_(ss) bus 46 is coupled to bottom plate 26 by metallizedcontacts 48 formed in openings 50 through interlayer dielectric 38 andcontacting N+ contacts 36. For each of the busses a plurality ofmetallized contacts is generally used to insure good contact between thebus and the respective plate of the capacitor. Also, a plurality ofcapacitor structures is coupled between the two busses, and suchcapacitor structures will be found distributed about the integratedcircuit.

FIGS. 2-11 illustrate, in cross section, method steps for forming aportion of a decoupling capacitor 52 as part of a silicon on insulatorCMOS integrated circuit 53 in accordance with an embodiment of theinvention. In accordance with an embodiment of the invention, explainedmore fully below, decoupling capacitor 52 includes at least onedischarge path by which charge that builds up on the capacitor or on anynon-ground node in the circuit during processing can be safelydischarged to avoid destruction of the capacitor dielectric. Althoughthe term “MOS device” properly refers to a device having a metal gateelectrode and an oxide gate insulator, that term will be used throughoutto refer to any semiconductor device that includes a conductive gateelectrode (whether metal or other conductive material) that ispositioned over a gate insulator (whether oxide or other insulator)which, in turn, is positioned over a semiconductor substrate. In theseillustrative embodiments only a small portion of CMOS integrated circuit53 is illustrated, specifically the portion of the circuit in whichdecoupling capacitor 52 is formed in addition to one N-channel MOStransistor (NMOS transistor) and one P-channel MOS transistor (PMOStransistor). Various steps in the manufacture of CMOS devices are wellknown and so, in the interest of brevity, many conventional steps willonly be mentioned briefly herein or will be omitted entirely withoutproviding the well known process details. Although in this illustrativeembodiment the integrated circuit is described as a CMOS circuit, theinvention is also applicable to the fabrication of a single channel typeMOS circuit. This application is related to co-pending application Ser.No. 11/133,969, the disclosure of which is incorporated by reference inits entirety.

As illustrated in FIG. 2, the method in accordance with one embodimentof the invention begins by providing a semiconductor substrate 54. Thesemiconductor substrate is preferably a silicon substrate with amonocrystalline silicon layer 30 formed overlying a monocrystallinesilicon carrier substrate 34. As used herein, the terms “silicon layer”and “silicon substrate” will be used to encompass the relatively pure orlightly impurity doped monocrystalline silicon materials typically usedin the semiconductor industry as well as silicon admixed with otherelements such as germanium, carbon, and the like to form substantiallymonocrystalline semiconductor material. For ease of description, butwithout limitation, the semiconductor materials will generally bereferred to herein as silicon materials. Monocrystalline silicon layer30 will be used in the formation of N-channel and P-channel MOStransistors as well as decoupling capacitor 52. Monocrystalline siliconsubstrate 34 provides a support for monocrystalline silicon layer 30and, in accordance with an embodiment of the invention, will be used forthe formation of discharge paths for discharging potentially deleteriouscharge build up on decoupling capacitor 52. Monocrystalline siliconlayer 30 is bonded to monocrystalline silicon carrier substrate 34 bywell known wafer bonding and thinning techniques with a dielectricinsulating layer 32 separating monocrystalline silicon layer 30 frommonocrystalline carrier substrate 34. The monocrystalline silicon layeris thinned to a thickness of about 50-300 nanometers (nm) depending onthe circuit function being implemented. Both the monocrystalline siliconlayer and the monocrystalline silicon carrier substrate preferably havea resistivity of at least about 1-35 Ohms per square. In accordance withone embodiment of the invention thin silicon layer 30 is impurity dopedN-type and monocrystalline carrier substrate 34 is impurity dopedP-type. Dielectric insulating layer 32, typically silicon dioxide,preferably has a thickness of about 50-200 nm.

As one alternative to the wafer bonding technique, monocrystallinesemiconductor substrate 54 can be formed by the SIMOX process. The SIMOXprocess is a well known process in which oxygen ions are implanted intoa sub-surface region of monocrystalline silicon substrate 34. Themonocrystalline silicon substrate and the implanted oxygen aresubsequently heated to form a sub-surface silicon oxide dielectric layer32 that electrically isolates the upper portion of the substrate, SOIlayer 30, from the remaining portion of monocrystalline siliconsubstrate 34. The thickness of SOI layer 30 is determined by the energyof the implanted ions. Regardless of the method used to form the SOIlayer, dielectric layer 32 is commonly referred to as a buried oxide or“BOX” and will so be referred to herein.

Having provided a semiconductor substrate 54, the method in accordancewith one embodiment of the invention continues as illustrated in FIG. 3by the formation of dielectric isolation regions 56-58 extending throughmonocrystalline silicon layer 30 to dielectric layer or BOX 32. Thedielectric isolation regions are preferably formed by the well knownshallow trench isolation (STI) technique in which trenches are etchedinto monocrystalline silicon layer 30, the trenches are filled with adielectric material such as deposited silicon dioxide, and the excesssilicon dioxide is removed by CMP. As is well known, there are manyprocesses that can be used to form the STI, so the process need not bedescribed here in detail. In this illustrative example only a singleN-channel MOS transistor 300, a single P-channel MOS transistor 200, anda single decoupling capacitor 52 will be illustrated. Those of skill inthe art will appreciate that many other devices may be needed toimplement a desired circuit function including a plurality of N-channelMOS transistors, a plurality of P-channel MOS transistors, and aplurality of decoupling capacitors. Accordingly, additional STI regions(not illustrated) can be formed to provide electrical isolation, asneeded, between the various other devices of the CMOS circuit that is tobe formed in and on monocrystalline silicon layer 30.

In accordance with an embodiment of the invention, the portion 60 ofthin monocrystalline silicon layer 30 between dielectric isolationregions 56 and 57 can be doped N-type. The N-type doing can be theoriginal doping of layer 30, or can be subsequent doping by ionimplantation or the like. Portion 60 of the thin monocrystalline siliconlayer 30 forms the bottom plate of decoupling capacitor 52. In likemanner, portion 61 of thin monocrystalline silicon layer 30 betweendielectric isolation regions 57 and 58 can also be doped N-type. Portion61 will be used for the formation of a P-channel transistor 200. Portion63 of layer 30 adjacent dielectric isolation region 56 can be dopedP-type, for example by ion implantation. Portion 63 will be used for theformation of an N-channel transistor 300. Portions of layer 30 that arenot to receive a particular implantation can be masked by a patternedlayer of photoresist in accordance with well known photolithography andion implantation techniques. As illustrated in FIG. 3, a layer ofdielectric material 62 is formed at least on the surface of portion 60,portion 61, and portion 63 of the SOI layer. Dielectric material 62preferably has a thickness of about 1-3 nm and most preferably has athickness of about 1.5-2.0 nm. Dielectric material 62 forms the gateinsulator of P-channel transistor 200, N-channel transistor 300, and thecapacitor dielectric of capacitor 52. It is not necessary that layer 62be used for all three devices; that is, one dielectric layer could beused for the capacitor dielectric and a different dielectric layer couldbe used for the gate insulator of transistors 200 and/or 300, but usinglayer 62 for all three devices helps to minimize the number of methodsteps. The dielectric material can be thermally grown silicon dioxideformed by heating silicon layer 30 in an oxidizing ambient or can be adeposited layer of silicon oxide, silicon oxynitride, silicon nitride,or a high dielectric constant dielectric such as HfSiO, or the like.Deposited insulators can be deposited by chemical vapor deposition(CVD), low pressure chemical vapor deposition (LPCVD), or plasmaenhanced chemical vapor deposition (PECVD). As illustrated, layer 62 isa deposited layer that deposits on the dielectric isolation regions aswell as on the thin silicon layer 30. A layer of polycrystalline siliconor other gate electrode forming material is deposited onto the layer ofdielectric material and is patterned to form a top plate 64 ofdecoupling capacitor 52, a gate electrode 202 of P-channel MOStransistor 200, and a gate electrode 302 of N-channel MOS transistor300. The gate electrode forming material will hereinafter be referredto, for convenience of description but without limitation, aspolycrystalline silicon although those of skill in the art willrecognize that other materials can also be used. The polycrystallinesilicon can be deposited by CVD or LPCVD by the reduction of silane(SiH₄). A layer of hard mask material such as silicon oxide, siliconnitride, silicon oxynitride, or the like (not illustrated) can also bedeposited over the layer of polycrystalline silicon to aid in thepatterning and etching of the gate electrodes. The polycrystallinesilicon layer can be patterned using a patterned photoresist layer andconventional photolithography techniques and plasma etching in a Cl orHBr/O₂ chemistry. In a preferred embodiment of the invention, sidewallspacers 66 are formed on the edges of top plate 64, gate electrode 202,and gate electrode 302. The sidewall spacers can be formed byanisotropically etching a layer of silicon oxide, silicon nitride, orthe like in well known manner. The layer of spacer forming material isanisotropically etched, for example by reactive ion etching (RIE) usinga CHF₃, CF₄, or SF₆ chemistry to remove the layer from substantiallyhorizontal surfaces (the tops of the polycrystalline silicon features)and to leave the layer on substantially vertical surfaces (the sidewallsof the polycrystalline silicon features).

As illustrated in FIG. 4, at least one opening 74 is etched through aportion of dielectric isolation region 57 and the underlying dielectriclayer 32. In accordance with a preferred embodiment of the invention asecond opening 75 is also etched through the dielectric isolation regionand the underlying dielectric layer. Although both opening 74 andopening 75 are shown to be etched through the same dielectric isolationregion, the two openings can be etched through separate isolationregions. Openings 74 and 75 are anisotropically etched, preferably byreactive ion etching. The dielectric layers can be reactive ion etched,for example, using a CF₄, CHF₃, or SF₆ chemistry. Opening 74 exposes aportion 98 of the surface of monocrystalline silicon carrier substrate34 and opening 75 exposes a portion 99 of the carrier substrate. Theetching can be masked, for example, by a patterned layer of photoresist(not illustrated).

As also illustrated in FIG. 4, boron ions or other P-type conductivitydetermining ions are implanted through opening 75, as indicated byarrows 76, into monocrystalline silicon carrier substrate 34 to form acontact region 78 in the carrier substrate. The same P-type ionimplantation can also be directed into thin monocrystalline siliconlayer 30 to form source 204 and drain 206 regions of P-channel MOStransistor 200 of integrated circuit 53. The ion implantation of thesource and drain regions is masked by and thus self aligned to gateelectrode 202 and the associated sidewall spacers 66. Other devices canbe masked during the P-type ion implantation by a patterned layer ofphotoresist (not illustrated).

Either before or after the implantation of P-type conductivitydetermining ions through opening 75, N-type conductivity determiningions such as arsenic or phosphorus are implanted through opening 74 asindicated by arrows 174 as illustrated in FIG. 5. The N-typeconductivity determining ions are implanted into monocrystalline siliconcarrier substrate 34 to form an N-type region 176 that forms a PNjunction diode 177 with the carrier substrate. The same N-type ionimplantation can be used to form contact regions 68, 70 in selfalignment with top plate 64 by implanting the ions into portion 60 ofthin monocrystalline silicon layer 30 using top plate 64 and sidewallspacers 66 as ion implantation masks. The heavily doped (N+) contactregions facilitate good electrical contact to the bottom plate of thedecoupling capacitor. At the same time that diode region 176 and contactregions 68, 70 are being ion implanted, the same implantation can beused to implant the drain 304 and source 306 regions of N-channel MOStransistor 300. The ion implantation of the source and drain regions ismasked by and thus self aligned to gate electrode 302 and the associatedsidewall spacers 66. During the N-type ion implantation, P-channel MOStransistor 200 and other regions of the integrated circuit can be maskedin known manner, for example with a layer of photoresist (notillustrated).

After removing the masking photoresist layer, the exposed portions ofinsulator layer 62 are removed and, in accordance with one embodiment ofthe invention, a layer of silicide forming metal such as nickel, cobalt,titanium, palladium, or the like is globally deposited onto thestructure. The silicide forming metal is deposited in contact with theion implanted contact region 78, diode region 176, regions 68, 70 andpolycrystalline silicon top plate 64 of capacitor structure 52, source204 and drain 206 regions and gate electrode 202 of PMOS transistor 200,as well as in contact with drain 304 and source 306 regions and gateelectrode 302 of NMOS transistor 300. The silicide forming metalpreferably has a thickness of about 5-15 nm. The silicide forming metalis heated, preferably to a temperature of about 350°-500° C. to causethe metal to react with the silicon with which it is in contact to formmetal silicide contact regions 80 and 82 on contact region 68, 70,respectively, a metal silicide contact 84 on contact region 78, a metalsilicide contact 178 on diode region 176, a metal silicide contact 86 onpolycrystalline silicon top plate 64, and metal silicide contacts 208and 210 on MOS transistor 200 and 308 and 310 on MOS transistor 300, allas illustrated in FIG. 6. The metal that is not in contact with silicon,for example the metal that is deposited on the dielectric isolationregions, does not react during the heating step and is removed, forexample by wet etching in a H₂O₂/H₂SO₄ or HNO₃/HCl solution. Metalsilicide contacts 209 and 309 to the gate electrodes of MOS transistors200 and 300 may also be formed at the same time.

In accordance with an embodiment of the invention an interlayerdielectric material layer 88 such as silicon oxide is globally depositedto cover the polycrystalline silicon features and silicided regions andto fill openings 74 and 75. Layer 88 is subsequentlyphotolithographically patterned and etched to form openings 90 thatexpose portions of metal silicide contacts 80, 82, 84, 178, 86, 208,210, 308, and 310 as illustrated in FIG. 7. Interlayer dielectricmaterial layer 88 can be deposited, for example, by CVD by thedecomposition of a source material such as tetraethylorthosilicate(TEOS) and can be etched, for example, by reactive ion etching using aCHF₃, CF₄, or SF₆ chemistry. Conductive plugs are formed in openings 90.Conductive plug 92 contacts metal silicide contact 80, conductive plug94 contacts metal silicide contact 82, conductive plug 96 contacts metalsilicide contact 84, contact plug 180 contacts metal silicide contact178, and conductive plug 98 contacts metal silicide contact 86 ofcapacitor structure 52. In like manner, conductive plugs 212, 214, 312,and 314 contact metal silicide contacts, 208, 210, 308, and 310,respectively. The conductive plugs can be formed in conventional manner,for example by depositing a layer of titanium, forming a layer oftitanium nitride, and then depositing a layer of tungsten. The excessplug material can be removed from the surface of interlayer dielectricmaterial 88 by a CMP process.

As illustrated in FIGS. 8-11, the decoupling capacitor structure iscompleted, in accordance with an embodiment of the invention, bydepositing and patterning one or more layers of metal to form a V_(dd)bus 100 and a V_(ss) bus 102. Routing of the required busses and otherinterconnect metallization generally requires several layers ofmetallization. Those layers of metallization can be electricallyseparated by layers of dielectric material. The layer of metal can bealuminum, copper, an alloy of aluminum or copper, or the like. Those ofskill in the art will understand that aluminum metallization isgenerally deposited and then photolithographically patterned and etchedwhereas copper metallization is generally patterned by a damasceneprocess. FIGS. 8-11 schematically illustrate steps for the formation ofV_(dd) bus 100 and V_(ss) bus 102 from a metal such as aluminum.

As illustrated in FIG. 8, a layer of metal 400 such as aluminum or analuminum alloy is deposited over the top of dielectric layer 88 and incontact with the conductive plugs. The layer of metal is patterned, asillustrated in FIG. 9 to form portions of V_(dd) bus 100 electricallycoupled to drain 304 of N-channel MOS transistor 300, electricallycoupled to top plate 64 of decoupling capacitor 52 and to diode 177. Thelayer of metal is also patterned to form portions of V_(ss) bus 102electrically coupled to bottom plate 60 of decoupling capacitor 52, todrain region 206 of P-channel MOS transistor 200 and to substratecontact 78.

As illustrated in FIG. 10, the method continues, in accordance with oneembodiment of the invention, by the deposition of another dielectriclayer 402 overlying dielectric layer 88 and the patterned metal layer400. Preferably the top surface of dielectric layer 402 is planarized,for example by a CMP process. Openings 404 are patterned and etched toextend through dielectric layer 402 to expose portions of V_(dd) bus100. Openings 404 can be filled with conductive plugs 406 and anadditional layer of metal 408 is deposited onto the planarized uppersurface of dielectric layer 402 and in electrical contact withconductive plugs 406.

As illustrated in FIG. 11, metal layer 408 can be patterned and etchedto form a portion 410 of the V_(dd) bus that can be coupled, forexample, to an external power supply. Although not illustrated in FIGS.10 and 11 because of limitations of a two dimensional figure, additionalopenings can be patterned and etched through dielectric layer 402 toexpose portions of V_(ss) bus 102, those openings can be filled withconductive plugs, and a portion of metal layer 408 can be patterned toelectrically connect to those conductive plugs. Additionally, a V_(ss)connection can be made to substrate 34 as indicated at terminal 412.

The V_(dd) bus is coupled to conductive plug 98 and hence to top plate64 of decoupling capacitor 52. The V_(ss) bus is coupled to conductiveplugs 92 and 94 and hence to the bottom plate 60 of decoupling capacitor52. The decoupling capacitor is thus coupled between the two voltagebusses. In accordance with an embodiment of the invention, the V_(dd)bus is also coupled to conductive plug 180 and hence to PN junctiondiode 177 formed in carrier substrate 34 providing an electricaldischarge path for charge that may build up on the top plate ofcapacitor 52. Positive charge build up on top plate 64 can leak off tothe substrate as reverse bias leakage current of PN junction diode 177.Negative charge build up on top plate 64 can leak off to the substrateas forward bias current of PN junction diode 177. In addition, inaccordance with a further embodiment of the invention, the V_(ss) bus isalso coupled to conductive plug 96 and hence to carrier substrate 34,providing another electrical discharge path for charge that may build upon the bottom plate of the capacitor.

At least for some of the MOS transistors of integrated circuit 53, theV_(dd) bus is also coupled to conductive plug 312 and hence to the drainof N-channel MOS transistor 300, and the V_(ss) bus is also coupled toconductive plug 212 and hence to the drain of P-channel MOS transistor200. Because of the limitations of a two dimensional figure, some of thedirect connections between elements have been illustrated schematicallyby dotted lines 414. Although FIG. 11 illustrates a discharge pathextending from V_(dd) to pn junction diode 177, the discharge path canbe coupled to extend from any non-ground circuit node that potentiallycan be harmed by a build up of charge generated through the variousplasma etching and deposition steps employed in the fabrication of IC53. The discharge path has been illustrated as extending from animpurity doped region of an MOS transistor to pn junction diode 177, butalthough not illustrated in the figures, the discharge path can alsoextend from a gate electrode such as gate electrode 302 of MOStransistor 300 to the pn junction diode.

While at least one exemplary embodiment has been presented in theforegoing detailed description, it should be appreciated that a vastnumber of variations exist. For example, the order of the method stepsdescribed above is illustrative only and is not intended to be limiting.Similarly, the enumerated metals, insulators, and ion species areillustrative only. Although the V_(dd) bus and the V_(ss) bus areillustrated in FIGS. 8-11 as being formed on the same metallizationlevels in the integrated circuit, they may also be formed at differentmetallization levels. It should also be appreciated that the exemplaryembodiment or exemplary embodiments are only examples, and are notintended to limit the scope, applicability, or configuration of theinvention in any way. Rather, the foregoing detailed description willprovide those skilled in the art with a convenient road map forimplementing the exemplary embodiment or exemplary embodiments. Itshould be understood that various changes can be made in the functionand arrangement of elements without departing from the scope of theinvention as set forth in the appended claims and the legal equivalentsthereof.

1. A semiconductor on insulator (SOI) device, comprising: asemiconductor substrate including a pn junction diode formed in a firstportion of the semiconductor substrate; a buried insulator layeroverlying the semiconductor substrate; a monocrystalline semiconductorlayer overlying the buried insulator layer; an MOS capacitor comprising:a first plate that comprises gate electrode forming material having afirst conductivity type; a second plate that comprises an impurity dopedregion having the first conductivity type in the monocrystallinesemiconductor layer beneath the gate electrode forming material; adielectric layer disposed between the first plate and the second plate,a first contact region electrically in series with the impurity dopedregion, and a second contact region electrically in series with theimpurity doped region, wherein the first contact region and the secondcontact region each have the first conductivity type; a first voltagebus coupled to the pn junction diode and the first plate; and a secondvoltage bus coupled to the second plate, the first contact region andthe second contact region such that the MOS capacitor is coupled betweenthe first voltage bus and the second voltage bus.
 2. The semiconductoron insulator (SOI) device of claim 1, wherein the pn junction diodecomprises an n-type impurity doped region, and wherein the first voltagebus is coupled to the n-type impurity doped region.
 3. The semiconductoron insulator (SOI) device of claim 1, further comprising: a firstelectrical discharge path coupling the first plate to the pn junctiondiode, wherein the first electrical discharge path includes the firstvoltage bus.
 4. The semiconductor on insulator (SOI) device of claim 3,further comprising: a second electrical discharge path coupling thesecond plate to the semiconductor substrate, wherein the secondelectrical discharge path includes the second voltage bus.
 5. Thesemiconductor on insulator (SOI) device of claim 4, wherein the secondelectrical discharge path comprises conductors without any intermediatedevice included in the second electrical discharge path.
 6. Thesemiconductor on insulator (SOI) device of claim 1, further comprising:a first electrical contact region formed in a second portion of thesemiconductor substrate, wherein the second voltage bus is coupled tothe first electrical contact region.
 7. The semiconductor on insulator(SOI) device of claim 1, wherein the first conductivity type is n-type.8. The semiconductor on insulator (SOI) device of claim 1 furthercomprising: a PMOS transistor formed in a first electrically isolatedportion of the monocrystalline semiconductor layer; an NMOS transistorformed in a second electrically isolated portion of the monocrystallinesemiconductor layer; and wherein the MOS capacitor is formed in a thirdelectrically isolated portion of the monocrystalline semiconductorlayer.
 9. The semiconductor on insulator (SOI) device of claim 8,wherein a drain of the PMOS transistor is coupled to the second voltagebus and a drain of the NMOS transistor is coupled to the first voltagebus.
 10. A semiconductor on insulator (SOI) device comprising a p-typesemiconductor substrate, a buried insulator layer overlying the p-typesemiconductor substrate, and a monocrystalline semiconductor layeroverlying the buried insulator layer, the SOI device further comprising:a pn junction diode formed in a first portion of the p-typesemiconductor substrate, wherein the first portion is doped with n-typeimpurities to form an n-type region; a contact in a second portion ofthe p-type semiconductor substrate that is doped with p-type impurities;a capacitor, comprising: a first plate comprising an n-type impuritydoped region in a portion of the monocrystalline semiconductor layer, aninsulator layer overlying the portion of the monocrystallinesemiconductor layer, a second plate comprising a conductive electrodeoverlying the insulator layer, a first contact region electrically inseries with the impurity doped region, and a second contact regionelectrically in series with the impurity doped region, wherein theconductive electrode, the first contact region, and the second contactregion each have n-type conductivity; a first bus coupled to the secondplate and to the n-type region of the pn junction diode; and a secondbus coupled to the first plate and to the contact in the second portionof the p-type semiconductor substrate.
 11. The semiconductor oninsulator (SOI) device of claim 10, further comprising: a firstelectrical discharge path coupling the first plate to the contact in thesecond portion of the p-type semiconductor substrate; and a secondelectrical discharge path coupling the second plate to the n-type regionof the pn junction diode, wherein the second electrical discharge pathcomprises conductors without any intermediate device included in thesecond electrical discharge path.
 12. The semiconductor on insulator(SOI) device of claim 10, wherein the conductive electrode comprises afirst portion of a polycrystalline silicon layer overlying the insulatorlayer, and further comprising: an NMOS transistor comprising a firstgate electrode, the first gate electrode comprising a second portion ofthe polycrystalline silicon layer; and a PMOS transistor comprising asecond gate electrode, the second gate electrode comprising a thirdportion of the polycrystalline silicon layer.
 13. A semiconductorcomponent, comprising: a semiconductor on insulator (SOI) substratehaving a first p-type semiconductor layer having a contact area, a layerof insulator on the first p-type semiconductor layer, and a secondsemiconductor layer overlying the layer of insulator; an MOS transistorcomprising an n-type drain region formed in the second semiconductorlayer; a pn junction diode comprising an n-type impurity doped regionformed in the first p-type semiconductor layer; a capacitor comprising:a bottom capacitor plate comprising an n-type region in the secondsemiconductor layer, a first n-type contact region electrically inseries with the n-type region, a second n-type contact regionelectrically in series with the n-type region, a capacitor dielectriclayer overlying the n-type region in the second semiconductor layer, anda top capacitor plate overlying the capacitor dielectric layer; a firstvoltage bus coupled to the n-type impurity doped region and to the topcapacitor plate; a first electrical discharge path coupling the topcapacitor plate to the pn junction diode; a second voltage bus coupledto the contact area in the first p-type semiconductor layer, to then-type region in the second semiconductor layer and to the n-type drainregion in the second semiconductor layer; and a second electricaldischarge path coupling the bottom capacitor plate to the contact area.14. The semiconductor component of claim 13, wherein the first voltagebus and the second voltage bus comprise a first layer of metal, andfurther comprising: a first interconnect electrically coupled to aportion of the n-type drain region and to the second voltage bus, thefirst interconnect comprising a second layer of metal different that thefirst layer of metal; and a second interconnect electrically coupled toa portion of the n-type impurity doped region and to the first voltagebus, the second interconnect comprising the second layer of metal.